Current perpendicular to plane (CPP) GMR structure having...

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head

Reexamination Certificate

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C257S421000

Reexamination Certificate

active

10970150

ABSTRACT:
A current perpendicular to plane (CPP) giant magnetoresistive (GMR) sensor having an antiparallel coupled (AP coupled) pinned layer structure wherein the pinning layer have a greatly reduced negative contribution to dR. The pinned layer structure includes a first a first set of magnetic layers such as CoFe and a second set of magnetic layer comprising CoFeV that are antiparallel coupled with the first set of magnetic layers. The magnetic layers of the pinned layer structure alternate between a one of the first set of magnetic layers (eg. CoFe) and one of the second set of magnetic layers (CoFeV). The magnetic layers of the first set contribute to the GMR of the sensor and provide a positive magnetostriction that assists with the pinning of the pinned layer structure. The magnetic layers of the second set contribute pinning, but do not contribute to GMR. The presence of V in the second set of greatly reduces the negative contribution to dR that would otherwise be provided by these pinning layers of the second set by reducing the spin dependent electron scattering through these layers.

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