Tri-gate transistors and methods to fabricate same

Details Tri-gate transistors and methods to fabricate same Tri-gate transistors and methods to fabricate same

2007-09-11

2007-09-11

Smith, Bradley K (Department: 2891)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S254000, C257SE21540

Reexamination Certificate

active

10760028

ABSTRACT:
Embodiments of the invention provide a method for effecting uniform silicon body height for silicon-on-insulator transistor fabrication. For one embodiment, a sacrificial oxide layer is disposed upon a semiconductor substrate. The oxide layer is etched to form a trench. The trench is then filled with a semiconductor material. The semiconductor material is then planarized with the remainder of the oxide layer and the remainder of the oxide layer is then removed. The semiconductor fins thus exposed are of uniform height to within a specified tolerance.

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