Inverted nitride-based semiconductor structure

Details Inverted nitride-based semiconductor structure Inverted nitride-based semiconductor structure

2007-09-11

2007-09-11

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S024000, C257SE29246, C257SE29247

Reexamination Certificate

active

10974512

ABSTRACT:
A nitride-based semiconductor structure is provided. The structure includes an active layer that comprises an inverted quantum well structure that includes Indium and Nitrogen. The structure can be used to create a field effect transistor. In this case, the active layer forms an inverted active device channel. By including Indium and forming the inverted active device channel, a device having improved performance characteristics can be manufactured. Further, additional improvements, such as one or more additional layers, a second gate contact, and/or one or more field plates can be included in the device to obtain the desired performance characteristics.

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“Inverted GaAs/AlGaAs Modulation-Doped Field-Effect Transistors with Extremely High Transconductances”, Cirillo et al., IEEE Electron Device Letters, vol. 7, Feb. 1986, 71-74.
“AlGaN/GaN-heterojunction FET with inverted 2DEG Channel”, Mokerov et al., Proceedings of the 11th GaAs symposium, pp. 301-304, Munich, Oct. 2003.

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