Semiconductor device

Details Semiconductor device Semiconductor device

2007-09-04

2007-09-04

Baumeister, B. William (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S076000, C257S328000, C257SE29104

Reexamination Certificate

active

10928269

ABSTRACT:
A semiconductor device formed on a silicon carbide semiconductor substrate comprises an epitaxial layer formed on a surface sloping (or inclining) by 0 to less than 1 degree from a (000-1) face of the silicon carbide semiconductor substrate, wherein at least one of a P type semiconductor area or an N type semiconductor area is selectively formed in the epitaxial layer by ion implantation, a metal electrode is formed so as to contact a surface layer of the P type semiconductor area or the N type semiconductor area, a rectification function is shown between the metal electrode and the P type semiconductor area or the N type semiconductor area, and the semiconductor device is formed on the silicon carbide semiconductor substrate of a Schottky barrier diode or a PN type diode.

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