Differential color sensor without filters

Radiant energy – Photocells; circuits and apparatus – Optical or pre-photocell system

Reexamination Certificate

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C250S214100, C356S402000

Reexamination Certificate

active

10919593

ABSTRACT:
A semiconductor color sensor implemented without the use of color filters. Fabricating photodiodes using different semiconductor materials provide photodiodes with different sensitivities vs. wavelengths. A first embodiment uses photodiodes with different junction depths. A shallow junction depth produces a photodiode with its sensitivity peak in shorter wavelengths, while a deeper junction depth produces a photodiode with its sensitivity peak in longer wavelengths. Amorphous as well as crystalline structures may be used. A second embodiment uses photodiodes with different materials, such as Silicon-Germanium (SiGe) which has a longer wavelength peak sensitivity, and Silicon (Si) which has a shorter wavelength peak sensitivity in comparison. More than two photodiodes having different wavelength sensitivities may be used. Sensing current ratios between pairs of diodes allows color balance to be maintained.

REFERENCES:
patent: 4309604 (1982-01-01), Yoshikawa et al.
patent: 4778987 (1988-10-01), Saaski et al.
patent: 5436493 (1995-07-01), Mantell
patent: 5508512 (1996-04-01), Gray et al.
David L. Gilblom, Alternative Corporation, P. O. Box 4055, Los Altos, CA, USA 94024-1055; Sang Keun Yoo, HanVision Co., LTd., KAIST-AVH, 373-1, Guseong-dong, Yuseong-gu, Daejeon, R.O. Korea; Peter Ventura, Foveon, Inc., 2820 San Tomas Expressway, Santa Clara, CA, USA 95051; “Operation And Performance Of A Color Image Sensor With Layered Photodiodes”, Copyright 2003 Society Of Photo-Optical Instrumëntation Engineers; 7 Pages.

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