Interconnect alloys and methods and apparatus using same

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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C257S752000, C257S768000

Reexamination Certificate

active

10405796

ABSTRACT:
Integrated circuit interconnect alloys having copper, silver or gold as the major constituent element. The resulting reduction in melting temperature allows for improved coverage of high aspect ratio features with reduced deposition pressure. The alloys are used to fabricate interconnects in integrated circuits, such as memory devices. The interconnects can be high aspect ratio features formed using a dual damascene process. The integrated circuits having the interconnects are applicable to semiconductor dies, devices, modules and systems.

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Kaanta, C. , et al., “Dual Damascene: A ULSI Wiring Technology”,VMIC Conference, (Jun. 1991),144-152.
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Robinson, R. N., “Periodic Table of Elements”,Chemical Engineering Reference Manual, Appendix D,(1987),3 pages.

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