Floating-gate MOS transistor with double control gate

Details Floating-gate MOS transistor with double control gate Floating-gate MOS transistor with double control gate

2007-07-10

2007-07-10

Le, Thong Q. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185260, C365S185280

Reexamination Certificate

active

11155306

ABSTRACT:
The present invention relates to a floating-gate MOS transistor, comprising drain and source regions implanted into a silicon substrate, a channel extending between the drain and source regions, a tunnel oxide, a floating gate, a gate oxide and a control gate extending according to a determined gate length. According to the present invention, the control gate comprises a small gate and a large gate arranged side by side and separated by an electrically insulating material. Application to the production of memory cells without access transistor, and to the implementation of an erase-program method with reduced electrical stress for the tunnel oxide.

REFERENCES:
patent: 3825946 (1974-07-01), Frohman-Bentchkowsky
patent: 4357685 (1982-11-01), Daniele et al.
patent: 5008212 (1991-04-01), Chen
patent: 6144586 (2000-11-01), Van Houdt et al.
patent: 6414876 (2002-07-01), Harari et al.
patent: 6504762 (2003-01-01), Harari
patent: 6822900 (2004-11-01), Kamei
patent: 2004/0065917 (2004-04-01), Fan et al.
patent: 6-97456 (1994-04-01), None
Torelli, G. “An LSI Technology Fully Compatible EAROM Cell,”Alta Frequenza, LI:6:345-351, 1982.
Torelli, G. “An Improved Method for Programming a Word-Erasable EEPROM,”Alta Frequenza, LII:6:487-494, 1983.

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