Thyristor-based semiconductor device and method of fabrication

Details Thyristor-based semiconductor device and method of fabrication Thyristor-based semiconductor device and method of fabrication

2007-03-27

2007-03-27

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making regenerative-type switching device

C438S139000

Reexamination Certificate

active

10958820

ABSTRACT:
A thyristor-based semiconductor memory device may comprise at least a region thereof, e.g., a p-base region, having high ionization energy impurity, such as a dopant. This high ionization energy impurity within a base region may be operable to compensate for a gain-versus-temperature dependence of a constituent bipolar transistor of the thyristor element of a thyristor-based memory device. In particular embodiments, the high ionization energy impurity may include a donor and/or acceptor in silicon.

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