Transistor with independent gate structures

Details Transistor with independent gate structures Transistor with independent gate structures

2007-03-20

2007-03-20

Norton, Nadine (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S253000, C438S396000, C438S706000

Reexamination Certificate

active

10443375

ABSTRACT:
A method of making a transistor with independent gate structures. The gate structures are each adjacent to sidewalls of a semiconductor structure. The method includes depositing at least one conformal layer that includes a layer of gate material over a semiconductor structure that includes the channel region. A planar layer is formed over the wafer. The planar layer has a top surface below the top surface of the rat least one conformal layer at a location over the substrate. The at least one conformal layers are etched to remove the gate material over the semiconductor structure.

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