Dual metal stud bumping for flip chip applications

Details Dual metal stud bumping for flip chip applications Dual metal stud bumping for flip chip applications

2007-09-18

2007-09-18

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Ball or nail head type contact, lead, or bond

C257S779000, C257S781000, C257SE23021, C257S678000, C228S180210, C228S180220, C228S246000

Reexamination Certificate

active

10386211

ABSTRACT:
A method for forming a stud bumped semiconductor die is disclosed. The method includes forming a ball at the tip of a coated wire passing through a hole in a capillary, where the coated wire has a core and an oxidation-resistant coating. The formed ball is pressed to the conductive region on the semiconductor die. The coated wire is cut, thereby leaving a conductive stud bump on the conductive region, where the conductive stud bump includes an inner conductive portion and an outer oxidation-resistant layer.

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Zama, Satoru, et al., “Flip Chip Interconnect Systems Using Copper Wire Stud Bump and Lead Free Solder,” IEEE Transactions on Electronics Packaging Manufacturing, (Oct. 2001), vol. 24, No. 4, pp: 261-268.

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