Reduction of a feature dimension in a nano-scale device

Details Reduction of a feature dimension in a nano-scale device Reduction of a feature dimension in a nano-scale device

2007-03-13

2007-03-13

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

C438S770000, C438S800000, C438S618000, C428S429000

Reexamination Certificate

active

10943559

ABSTRACT:
Nano-scale devices and methods provide reduced feature dimensions of features on the devices. A surface of a device substrate having a pattern of spaced apart first nanowires is consumed, such that a dimension of the first nanowires is reduced. A second nanowire is formed in a trench or gap between adjacent ones of the first nanowires, such that the nano-scale device includes a set of features that includes the first nanowires with the reduced dimension and the second nanowire spaced from the adjacent first nanowires by sub-trenches.

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