Semiconductor device having a lateral MOSFET and combined IC...

Details Semiconductor device having a lateral MOSFET and combined IC... Semiconductor device having a lateral MOSFET and combined IC...

Filed on

2007-07-24

Date issued

2007-07-24

Examiner

Ha, Nathan W. (Department: 2814)

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Integrated circuit structure with electrically isolated...

SubSubClass

Including dielectric isolation means

Type

Reexamination Certificate

Status

active

Patent number

11235415

Description

ABSTRACT:
A semiconductor device realizes a high electrostatic discharge withstanding capability and a high surge withstanding capability within the narrow chip area of a lateral MOSFET used in integrated intelligent switching devices, double-integration-type signal input and transfer IC's, and combined power IC's. The semiconductor device includes a vertical bipolar transistor in which a base is electrically connected to an emitter and a collector, and a lateral MOSFET including a drain electrode connected to a surface electrode. The vertical bipolar transistor absorbs electrostatic discharge or surge energy when a high electrostatic discharge voltage or a high surge voltage is applied and limits the electrostatic discharge voltage or the surge voltage to be lower than the breakdown voltage of the lateral MOSFET.

REFERENCES:
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patent: 5780917 (1998-07-01), Mori
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patent: 2002/0060340 (2002-05-01), Deboy et al.
patent: 2003/0127687 (2003-07-01), Kumagai et al.
patent: 2001-291827 (2001-10-01), None
patent: 2001-320047 (2001-11-01), None
patent: 2002-94063 (2002-03-01), None

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