Semiconductor device and method of producing the same

Details Semiconductor device and method of producing the same Semiconductor device and method of producing the same

2007-04-17

2007-04-17

Tran, Long (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S273000, C438S311000

Reexamination Certificate

active

11191190

ABSTRACT:
A method of producing a semiconductor device includes the steps of: preparing a double SOI substrate, forming a deep trench, filling the deep trench, forming an opening, forming a cavity, depositing a polycrystalline silicon layer, and forming a bipolar transistor.

REFERENCES:
patent: 6521974 (2003-02-01), Oda et al.
patent: 6936910 (2005-08-01), Ellis-Monaghan et al.
patent: 6-69430 (1994-03-01), None
patent: 2001-274234 (2001-10-01), None

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