Isolation techniques for reducing dark current in CMOS image...

Details Isolation techniques for reducing dark current in CMOS image... Isolation techniques for reducing dark current in CMOS image...

2007-07-03

2007-07-03

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S223000, C257S230000, C257S513000, C257S508000, C257S760000, C257SE27139, C257SE27145, C257SE27150, C257SE27153

Reexamination Certificate

active

10926358

ABSTRACT:
Isolation methods and devices for isolating regions of a semiconductor device. The isolation method and structure include forming an isolating trench in an active area and filling the trench with a doped conductive material containing silicon. Suitable conductive materials containing silicon include polysilicon and silicon-germanium. There is also provided a method and structure for isolating the regions by providing a trench in an active area of a substrate, growing an epitaxial layer in the trench to fill the trench or to partially fill the trench and depositing an insulating material over the epitaxial layer and within the trench to completely fill the trench.

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