CMOS image sensor and method of fabricating the same

Details CMOS image sensor and method of fabricating the same CMOS image sensor and method of fabricating the same

2007-01-16

2007-01-16

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S710000, C438S757000

Reexamination Certificate

active

11024071

ABSTRACT:
A complementary metal-oxide semiconductor (CMOS) image sensor and a method of fabricating the same are disclosed. In a complementary metal-oxide semiconductor (CMOS) image sensor including a photodiode receiving irradiated light and generating electric charges, a plurality of conductive circuits each formed in different layers, a plurality of interlayer dielectrics insulating the conductive circuits, and a micro-lens formed of the interlayer dielectrics and focusing the irradiated light to the photodiode, the CMOS image sensor includes a lens formed in a dome shape on any one of the interlayer dielectrics and re-focusing the light focused by the micro-lens to the photodiode.

REFERENCES:
patent: 6043001 (2000-03-01), Hirsh et al.
patent: 6127668 (2000-10-01), Baek
patent: 6232590 (2001-05-01), Baek
patent: 6307243 (2001-10-01), Rhodes
patent: 6369417 (2002-04-01), Lee
patent: 6617189 (2003-09-01), Chen et al.
patent: 6861280 (2005-03-01), Yamamoto
patent: 6933167 (2005-08-01), Yamamoto
patent: 6979588 (2005-12-01), Jeong et al.
patent: 2001/0010952 (2001-08-01), Abramovich
patent: 2001/0054677 (2001-12-01), Nakashima
patent: 2003/0168679 (2003-09-01), Nakai et al.
patent: 2004/0183086 (2004-09-01), Nakai
patent: 2004/0185588 (2004-09-01), Fukuyoshi et al.
patent: 2005/0052562 (2005-03-01), Shimizu et al.
patent: 2005/0085087 (2005-04-01), Okigawa et al.
patent: 2005/0139945 (2005-06-01), Lim
patent: 2005/0274968 (2005-12-01), Kuo et al.
patent: 2006/0012001 (2006-01-01), Kim
patent: 2006/0033176 (2006-02-01), Mun
patent: 2006/0081955 (2006-04-01), Hong

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