Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-07-10
2007-07-10
Mai, Son L. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S189050
Reexamination Certificate
active
11240510
ABSTRACT:
A nonvolatile semiconductor memory device comprises a memory cell array which a plurality of an electrically rewritable nonvolatile memory cell is arranged and a sense amplifier having first, second and third circuits holding write-in data; and the first circuit receives data from the outside and transmits the data to the second circuit and the third circuit, and the second circuit and the third circuit transmit the data to two adjacent bit lines respectively, and the data is written in simultaneously to a memory cell selected among the nonvolatile memory cells connected to the two adjacent bit lines.
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Kabushiki Kaisha Toshiba
Mai Son L.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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