Method, apparatus, and computer program for the Monte Carlo...

Data processing: structural design – modeling – simulation – and em – Modeling by mathematical expression

Reexamination Certificate

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C703S006000, C703S013000, C438S017000

Reexamination Certificate

active

09950278

ABSTRACT:
A Monte Carlo ion implantation simulation method includes finding a unit cell in which an implanted trial particle is present, finding a basic cell in which the trial particle is present among basic cells that form the unit cell, finding a directional range in which the trial particle travels, obtaining collision candidate atoms with their locations from a database according to the found basic cell and directional range, setting a thermal vibration displacement for each of the collision candidate atoms that has not set thermal vibration displacement, calculating a collision parameter and free-flight distance for each of the collision candidate atoms, selecting, as a collision atom, one of the collision candidate atoms that has a collision parameter smaller than a predetermined maximum collision parameter and a smallest positive free-flight distance, and calculating a collision between the trial particle and the collision atom to find the after-collision location and momentum of the trial particle.

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patent: 11-54449 (1999-02-01), None
patent: 11-111633 (1999-04-01), None
Yang, et al., “A More Efficient Approach for Monte Carlo Simulation Deeply-Channeled Implanted Profiles in Single-Crystal Silicon” Numerical Modeling of Process and Devices for Integrated Circuits 1994 p. 97-100.
Gau et al., “A Study on Physical Models of Ion Implantations”. Physical Science and Engineering) (Taiwan), vol. 19, p. 139-149, Mar. 1995.
G. Hobler et al., “Acceleration of Binary Collision Simulations in Crystalline Targets Using Critical Angles for Ion Channeling”, Nuclear Instruments and Methods in Physics Research B, vol. 102, (1995), pp. 24-28.
M. Posselt, “Crystal-Trim and its Application to Investigations on Channeling Effects During Ion Implantation”, Radiation Effects and Defects in Solids, vol. 130-131, (1994), pp. 87-119.

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