Leaf plot analysis technique for multiple-side operated devices

Static information storage and retrieval – Floating gate – Multiple values

Reexamination Certificate

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C365S185010, C365S185240

Reexamination Certificate

active

11150799

ABSTRACT:
A method for analyzing the interaction between threshold states of a multiple-bit memory cell on a coordinate system is provided. The coordinate system is formed using a plurality of axes with one axis being a threshold state of a first side of a memory cell and the second axis being a threshold state of a second side of a multiple-bit memory cell. An operation is initiated on the first side of the memory cell from a start point and continues to a first target point of the first side. Then, a trace is plotted from the start point of the first side of the memory cell to a target point of the first side of the memory cell. This plot illustrates the interaction of the threshold state of the first side of the memory cell to the threshold state of the second side of the memory cell.

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(Yeh, et al.), 4 pages (International Electron Devices Meeting Digest, 2002, pp. 931-934 PUB Date: Dec. 8-11, 2002.

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