Method of making CMOS circuits by twin tub process and multiple

Details Method of making CMOS circuits by twin tub process and multiple Method of making CMOS circuits by twin tub process and multiple

1984-03-14

1985-07-02

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29577C, 148 15, 148187, 148DIG82, 357 42, 357 91, H01L 2122, H01L 2978, H01L 21263

Patent

active

045259208

ABSTRACT:
A method for manufacturing a CMOS circuit wherein a process sequence matched to an n-tub manufacture is carried out. Short-channel properties of n-channel transistors are improved by performing double boron implantations of the channel regions. A single channel implantation is executed for both transistor types. Compared to traditional CMOS processes in n-tub structure, this eliminates involved masking steps. Also, the polysilicon gate is shielded from the boron ion implantation by means of a masking re-oxidation step and the under-diffusion given n-channel and p-channel transistors is greatly reduced by means of pull-back of the boron source/drain implantation. This contributes significantly to a symmetrical U.sub.T behavior of the transistors and to the attainment of high switching speeds. The method is used in the manufacture of VLSI CMOS circuits in VLSI technology.

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