Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2007-05-01
2007-05-01
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
With measuring or testing
C438S015000, C438S016000, C438S629000, C438S637000
Reexamination Certificate
active
10428937
ABSTRACT:
A substrate defining an insulating surface layer portion and formed with a wiring groove filled with a wiring line the wiring line is electrically connected to a conductive member. The conductive member occupies an area larger than an area of the wiring line as viewed along a line parallel to a normal to the first surface. An insulating first film is formed on the first surface. A via hole is formed through the first film. The via hole is formed so that a boundary between the wiring line and the insulating surface layer portion passes through the inside of the via hole. The bottom of the via hole is observed with an apparatus for obtaining image information by utilizing secondary electrons and reflection electrons, to judge whether a state of the bottom of the via hole is accepted or rejected.
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Kinoshita Yasushi (JP 10-256366) (translation).
Notice of Reasons of Rejections, May 2005, pp. 1-4.
Arent & Fox PLLC
Fujitsu Limited
Trinh Michael
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