Internal-reflection-interference semiconductor laser device

Details Internal-reflection-interference semiconductor laser device Internal-reflection-interference semiconductor laser device

1985-12-11

1988-01-19

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 48, 372 49, H01S 319

Patent

active

047208341

ABSTRACT:
An internal-reflection-interference semiconductor laser device comprising a first laser operation area ranging from one facet to the internal reflecting section and a second laser operation area ranging from the other facet to the internal reflecting section, wherein when the internal-cavity length l.sub.1 of the first laser operation area is shorter than the internal-cavity length l.sub.2 of the second laser operation area, the reflectivity R.sub.1 at the facet on the side of the first laser operation area is smaller than the reflectivity R.sub.2 at the facet on the side of the second laser operation area.

REFERENCES:
patent: 4092657 (1978-05-01), Ettenberg
Hong K. Choi and Shyh Wang, "Semiconductor Internal-Reflection-Interference Laser" Dept. of Electrical Engineering and Computer Science and Electronic Research Lab., University of California, Berkeley, California 94720, Appl. Phys. Lett. 40(7), Apr. 1, 1982, 0003-6951/82/07057.1, 1982 American Insti. of Physics, pp. 571-573.

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