Quantum well sensor having spatially separated sensing columns

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Reexamination Certificate

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C257S184000, C257S436000, C257S466000

Reexamination Certificate

active

09924209

ABSTRACT:
Quantum-well sensors having an array of spatially separated quantum-well columns formed on a substrate. A grating can be formed increase the coupling efficiency.

REFERENCES:
patent: 5198659 (1993-03-01), Smith et al.
patent: 5384469 (1995-01-01), Choi
patent: 5470761 (1995-11-01), McKee et al.
patent: 5485015 (1996-01-01), Choi
patent: 5528051 (1996-06-01), Nuyen
patent: 5539206 (1996-07-01), Schimert
patent: 5552603 (1996-09-01), Stokes
patent: 6091126 (2000-07-01), Costard et al.
patent: 6184538 (2001-02-01), Bandara et al.
patent: 6271537 (2001-08-01), Gunapala et al.
patent: 6545289 (2003-04-01), Gunapala et al.
Chen et al., “Corrugated Quantum Well Infrared Photodetectors with Polyimide Planarization for Detector Array Applications,” IEEE Transactions on Electron Devices, vol. 45, No. 7, Jul. 1998, pp. 1431-1437.
Pan et al., “Normal incident infrared absorption from InGaAs/GaAs quantum dot superlattice,” Electronics Letters, Aug. 29, 1996, vol. 32, No. 18, pp. 1726-1727.
Pan et al., “Strong normal-incidence infrared absorption and photo-current spectra from highly uniform (In,Ga)As/GaAs quantum dot structures,” Electronics Letters, May 14, 1998, vol. 34, No. 10, pp. 1019-1020.
Rokhinson et al., “Quantum grid infrared photodetectors,” Feb. 1, 1999, Applied Physics Letters, vol. 74, No. 5, pp. 759-761.
Gunapala, Sarath D. et al., “15-micrometer 128×128 GaAs/A1xGa1-xAs Quantum Well Infrared Photodetector Focal Plane Array Camera,” IEEE Transactions on Electron Devices, vol. 44, No. 1, Jan. 1997, pp. 45-50.
Gunapala, Sarath D. et al., “9-micrometer 256×256 GaAs/A1xGa1-As Quantum Well Infrared Photodector Hand-Held Camera,” IEEE Transactions on Electron Devices, vol. 44, No. 1, Jan. 1997, pp. 51-57.
Gunapala, Sarath D. et al., “Long-Wavelength 640×486 GaAs/A1xGa1-xAs Quantum Well Infrared Photodetector Snap-Shot Camera,” IEEE Transactions on Electron Devices, vol. 45, No. 9, Sep. 1998, pp. 1890-1895.

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