Method of plasma etching high-K dielectric materials with...

Details Method of plasma etching high-K dielectric materials with... Method of plasma etching high-K dielectric materials with...

2007-05-15

2007-05-15

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S711000, C438S722000, C216S067000, C216S068000, C216S076000

Reexamination Certificate

active

10301239

ABSTRACT:
A method of plasma etching a layer of dielectric material having a dielectric constant that is greater than four (4). The method includes exposing the dielectric material layer to a plasma comprising a hydrocarbon gas and a halogen containing gas.

REFERENCES:
patent: 5431778 (1995-07-01), Dahm et al.
patent: 5776356 (1998-07-01), Yokoyama et al.
patent: 5814563 (1998-09-01), Ding et al.
patent: 5972758 (1999-10-01), Liang
patent: 6228731 (2001-05-01), Liaw et al.
patent: 6232174 (2001-05-01), Nagata et al.
patent: 6235593 (2001-05-01), Huang
patent: 6242331 (2001-06-01), Chu et al.
patent: 6368518 (2002-04-01), Vaartstra
patent: 6432785 (2002-08-01), Wu
patent: 6437377 (2002-08-01), Ajmera et al.
patent: 6451647 (2002-09-01), Yang et al.
patent: 6451673 (2002-09-01), Okada et al.
patent: 6485988 (2002-11-01), Ma et al.
patent: 6509219 (2003-01-01), Tsou et al.
patent: 6599667 (2003-07-01), Yusa et al.
patent: 6620733 (2003-09-01), Ho
patent: 6642557 (2003-11-01), Liang
patent: 6727150 (2004-04-01), Tang
patent: 6835612 (2004-12-01), Cappellani et al.
patent: 6858907 (2005-02-01), Ryu et al.
patent: 2001/0042890 (2001-11-01), Liang
patent: 2002/0142523 (2002-10-01), Ryu et al.
patent: 2003/0211748 (2003-11-01), Jin et al.
patent: 2004/0014327 (2004-01-01), Ji et al.
patent: 2002/0096695 (2004-07-01), Ajmera et al.
patent: 2002/0132437 (2004-09-01), Tsou et al.
patent: 06-151383 (1994-05-01), None
patent: 06151383 (1994-05-01), None
patent: 11-293481 (1999-10-01), None
patent: 11293481 (1999-10-01), None
patent: 02/078058 (2002-10-01), None
patent: WO 03/012851 (2003-02-01), None
patent: WO 2004/109772 (2004-12-01), None
“Comparison of Plasma Chemistries For Dry Etching of Ta2O5”; Lee et. al.; J. Vac. Sci. Tech. A; □vol. 18; No. 4; Lee et. al.; Aug. 2000'; pp. 1169-1172.
Lee K.P. et al., “Comparison of plasma chemistries for dry etching of Ta2O5.” Journal of Vacuum Science and Technology, Vacuum, Surfaces and Films, American Institute of Physics, New York, NY vol. 18, No. 4, Jul. 2000, pp. 1169-1172, xp012005108, ISSN 0734-2101.

Affiliated with

Also associated with

Rating

Method of plasma etching high-K dielectric materials with... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of plasma etching high-K dielectric materials with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of plasma etching high-K dielectric materials with... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3742563