Shallow trench isolation and method of forming the same

Details Shallow trench isolation and method of forming the same Shallow trench isolation and method of forming the same

2007-01-09

2007-01-09

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S437000, C257SE21549

Reexamination Certificate

active

10969348

ABSTRACT:
A shallow trench isolation (STI) structure and a method of forming the STI structure. The STI structure defines an active region formed with a recess channel transistor. The STI structure includes a STI trench has a laterally curved rounding portion on the bottom of the recess channel trench. In order to form the STI trench with the rounding portion, a semiconductor substrate is selectively and anisotropically dry etched to form the trench. Then, the semiconductor substrate is isotropically etched around the bottom height of the recess channel trench to form the rounding portion, and then further anisotropically dry etched, thereby forming the STI trench. After an insulating layer that fill the STI trench is formed on the resultant structure, an upper surface of the resultant structure is planarized to expose a surface of the semiconductor substrate.

REFERENCES:
patent: 6521538 (2003-02-01), Soga et al.
patent: 6828212 (2004-12-01), Barry et al.
patent: 2003/0017710 (2003-01-01), Yang et al.
patent: 2003/0020110 (2003-01-01), Tews et al.
patent: 1997-0018141 (1997-04-01), None
patent: 010019290 (2001-03-01), None
English language abstract of Korean Publication No. 1997-0018141.
English language abstract of Korean Publication No. 010019290.

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