High frequency amplifier

Amplifiers – With semiconductor amplifying device – Including d.c. feedback bias control for stabilization

Reexamination Certificate

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Details

C330S283000

Reexamination Certificate

active

11043282

ABSTRACT:
An emitter of a transistor (1) for high frequency amplification and a cathode of a diode (5) for generating reference voltage are grounded via an inductance (20). Anode electric potential of the diode (5) decreases with increase in output power of the transistor (1) and thus the operation of the transistor (1) is limited. Since the diode is an on linear element, it is possible to quickly limit the operation of the transistor (1) in response to an increase in output current, thereby preventing a breakdown caused by overcurrent.

REFERENCES:
patent: 5907180 (1999-05-01), Johansson et al.
patent: 6717463 (2004-04-01), Aparin et al.
patent: 2005/0062538 (2005-03-01), Herzberg et al.
patent: 2003-273660 (2003-09-01), None

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