Semiconductor quantum dot device

Details Semiconductor quantum dot device Semiconductor quantum dot device

2007-03-13

2007-03-13

Owens, Douglas W. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S183000

Reexamination Certificate

active

10482966

ABSTRACT:
A p-type semiconductor barrier layer is provided in the vicinity of undoped quantum dots, and holes in the p-type semiconductor barrier layer are injected in advance in the ground level of the valence band of the quantum dots. Lowering the threshold electron density of conduction electrons in the ground level of the conduction band of quantum dots in this way accelerates the relaxation process of electrons from an excited level to the ground level in the conduction band.

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patent: 2001-308465 (2001-11-01), None
D. Leonard, et al., Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces, Applied Physics Letters, vol. 63, No. 23, pp. 3203-3205, Dec. 6, 1993.
G.T. Liu, et al., “Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15GA0.85As quantum well”, Electronics Letters, vol. 35, No. 14, pp. 1163-1165, Jul. 8, 1999.
H. Chen, et al., “InAs quantum-dot lasers operating near 1.3μm with high characteristic temperature for continuous-wave operation”, Electronics Letters, vol. 36, No. 20, pp. 1703-1704, Sep. 28, 2000.
Kazuhisa Uomi, “Modulation-Doped Multi-Quantum Well (MD-MQW) Lasers. I. Theory”, Japanese Journal of Applied Physics, vol. 29, No. 1, pp. 81-87, Jan. 1999.

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