Compound semiconductor, method for manufacturing the same,...

Details Compound semiconductor, method for manufacturing the same,... Compound semiconductor, method for manufacturing the same,...

2007-09-11

2007-09-11

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S047000

Reexamination Certificate

active

10959077

ABSTRACT:
A first semiconductor layer consisting of AlGaInP is formed on a substrate consisting of GaAs by crystal growth while adding magnesium (Mg) that is a p-type dopant to the first semiconductor layer. A second semiconductor layer consisting of GaAs is then grown on the first semiconductor layer without adding any magnesium to the second semiconductor layer. Thus, the second semiconductor layer can prevent unintended doping (memory effect) produced by magnesium.

REFERENCES:
patent: 5814531 (1998-09-01), Anayama et al.
patent: 6570179 (2003-05-01), Razeghi
patent: 6991955 (2006-01-01), Onishi
patent: 0 665 618 (1995-08-01), None
patent: 11-112030 (1999-04-01), None
patent: 2003-243695 (2003-08-01), None
Ohba, Y., et al., “A Study of p-Type Doping for AlGalnP Grown by Low-Pressure MOCVD.” Jpurnal of Crystal Growth, 93, Nov. 1988, XP-002328550, pp. 613-617.
Murata, H., et al. “Low Threshold Current Density of 620nm Band MQW-SCH AlGalnP Semiconductor Lasers with Mg Doped AllnP Cladding Layer.” Electronics Letters, Aug. 15, 1991, vol. 27, No. 17, XP000259844, pp. 1569-1571.
Roentgen, P., et al. “MOVPE of AlGalnP/GalnP heterostructures for visible lasers.” Journal of Crystal Growth, vol. 1107, No. 1/4, Jan. 1991, XP000246679, pp. 724-730.
European Search Report issued in corresponding European Patent Application No. 04 024 079.8, dated May 18, 2007.

Affiliated with

Also associated with

Rating

Compound semiconductor, method for manufacturing the same,... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Compound semiconductor, method for manufacturing the same,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Compound semiconductor, method for manufacturing the same,... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3739110