1985-11-08
1988-01-19
Edlow, Martin H.
357 42, 357 2, H01L 2712, H01L 2702, H01L 4500
Patent
active
047207396
ABSTRACT:
In accordance with the present invention, the inability of ohmic coupling to dielectrically provide isolated regions from the bottom surface of a support substrate is provided by a modified dielectric isolation structure in which bottom portions of selected dielectrically isolated island regions are contiguous with the material of the semiconductor bulk by which the dielectrically isolated island regions are supported by way of apertures through the dielectric isolation at these bottom portions. As a result, the supporting material of the bulk can be used to provide an ohmic coupling path from electrodes on the bottom surface of the wafer to the semiconductor material of selected island regions. For those dielectrically isolated regions, other than the selected regions, having a conductivity type opposite to that of the support substrate, complete dielectric isolation from the substrate is maintained, to prevent the existence of well-to-substrate PN junctions.
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Regh, J. "Fabrication of Two-Surface Devices" IBM Technical Disclosure Bulletin, vol. 9, No. 2, Jul. 1966, pp. 195-196.
Edlow Martin H.
Harris Corporation
Limanek Robert P.
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