Magnetic tunnel junction sensor method

Details Magnetic tunnel junction sensor method Magnetic tunnel junction sensor method

2007-05-22

2007-05-22

Hoang, Quoc (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257S414000, C257SE29167, C360S324200, C360S125330

Reexamination Certificate

active

11192570

ABSTRACT:
Methods and apparatus are provided for sensing physical parameters. The apparatus comprises a magnetic tunnel junction (MTJ) and a magnetic field source whose magnetic field overlaps the MTJ and whose proximity to the MTJ varies in response to an input to the sensor. The MTJ comprises first and second magnetic electrodes separated by a dielectric configured to permit significant tunneling conduction therebetween. The first magnetic electrode has its spin axis pinned and the second magnetic electrode has its spin axis free. The magnetic field source is oriented closer to the second magnetic electrode than the first magnetic electrode. The overall sensor dynamic range is extended by providing multiple electrically coupled sensors receiving the same input but with different individual response curves and desirably but not essentially formed on the same substrate.

REFERENCES:
patent: 6714442 (2004-03-01), Nahas
patent: 6897650 (2005-05-01), Black et al.
Li et al. “MEMS Microbridge Vibration Monitoring Using Spin-Valve Sensors,” IEEE Transactions on Magnetics, vol. 38, issue 5, pp. 3371-3373, 2002.
Papautsky et al., “A Low-Temperature IC-Compatible Process for Fabricating Surface-Micromachined Metallic Microchannels,”. J. of MEMS, vol. 7, No.2, pp. 267-273, 1998.

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