Switchable memory diode-a new memory device

Details Switchable memory diode-a new memory device Switchable memory diode-a new memory device

2007-01-02

2007-01-02

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S642000, C257SE51023, C257SE21024

Reexamination Certificate

active

10883350

ABSTRACT:
Systems and methodologies are provided for forming a diode component integral with a memory cell to facilitate programming arrays of memory cells created therefrom. Such a diode component can be part of a PN junction of memory cell having a passive and active layer with asymmetric semiconducting properties. Such an arrangement reduces a number of transistor-type voltage controls and associated power consumption, while enabling individual memory cell programming as part of a passive array. Moreover, the system provides for an efficient placement of memory cells on a wafer surface, and increases an amount of die space available for circuit design.

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Krieger et al., “Non-traditional, Non-volatile Memory Based on Switching and Retention Phenomena in Polymeric Thin Films”, Nov. 15-17, 2004, pp. 121-124.

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