Low loss and high speed diodes

Details Low loss and high speed diodes Low loss and high speed diodes

1986-12-01

1988-01-19

James, Andrew J.

357 13, 357 58, H01L 2948

Patent

active

047207345

ABSTRACT:
A diode having a Schottky barrier which permits bidirectional passage of minority carriers as well as majority carriers through the provision of a bidirectional conducting Schottky electrode that substitutes for the conventional Schottky electrode used in Schottky diodes or for the low-high electrode in Pn junction diodes.

REFERENCES:
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patent: 4047218 (1977-09-01), Clark et al.
patent: 4089020 (1978-05-01), Ikeda et al.
patent: 4110488 (1978-08-01), Risko
patent: 4110775 (1978-08-01), Festa
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IEEE Proceedings, vol. 63, p. 1523, 1975, by Harice.
Electronics Letters, vol. 12 #10 May 13, 1976, p. 238, "High Power P+ Schottky Baritt Diodes" by Ahmad.
Solid State Electronics, vol. 16 pp. 357-364, 1973 "Modulation Effect by Intense Hole Injection" by Jager et al.
Solid State Electronics, vol. 12 pp. 107-109"Metal-Semiconductor Impatt Diode" 1969 by Sze.
Physics of Semiconductor Devices 2nd ed 1981 S. M. Sze p. 294.
Solid State Electronics, 1973, vol. 16, pp. 357-364 "Modulation Effect by Intense Hole Injection in Schottky Barrier Diodes" by Jager and Kosah.
IEEE Transactions on Electron Devices, vol. ED-16, No. 1, Jan. 69 "PN Junction-Schottky Barrier Hybrid Diode" by Zettler and Cowley.
"Theoretical Performance of the Schottky Barrier Power Rectifier" by D. J. Page, SSE vol. 15, No. 5-C, p. 509.
"Comparison of the pn Fast Switching Rectifier and the Schottky Rectifier" by Robert A. Smith et al, IAS 76 Annual, p. 61.

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