Semiconductor device having multilayer wiring structure and...

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead

Reexamination Certificate

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Details

C257SE21303, C257SE21583, C257SE21309, C257S701000, C257S758000, C257S751000, C257S774000, C257S775000, C257S760000, C257S776000, C257S762000, C257S276000, C257S410000, C257S254000

Reexamination Certificate

active

10755003

ABSTRACT:
A method for manufacturing a semiconductor device includes a step of forming a first groove in a first insulating film, forming a conductive film in the first groove, a step of selectively forming a second insulating film on the conductive film and the first insulating film, a step of forming a second groove by removing part of the conductive film using the second insulating film as a mask, the second groove being formed so as to form a connecting portion of the conductive film under the second insulating film and form a first wiring layer by forming the connecting portion with a bottom of the first groove integrally with each other as one unit.

REFERENCES:
patent: 5510645 (1996-04-01), Fitch et al.
patent: 5773365 (1998-06-01), Ito
patent: 6051882 (2000-04-01), Avanzino et al.
patent: 6232215 (2001-05-01), Yang
patent: 6346438 (2002-02-01), Yagishita et al.
patent: 6454919 (2002-09-01), Sundarrajan et al.
patent: 6455436 (2002-09-01), Ueda et al.
patent: RE37882 (2002-10-01), Ezawa et al.
patent: 6461955 (2002-10-01), Tsu et al.
patent: 6492222 (2002-12-01), Xing
patent: 6495451 (2002-12-01), Hattori et al.
patent: 6515343 (2003-02-01), Shroff et al.
patent: 6566242 (2003-05-01), Adams et al.
patent: 6787907 (2004-09-01), Watanabe et al.
patent: 6815823 (2004-11-01), Teh et al.
patent: 2003/0143839 (2003-07-01), Raaijmakers et al.
patent: 2004/0043602 (2004-03-01), Wada et al.
patent: 2004/0185678 (2004-09-01), Lee et al.
patent: 63-228736 (1988-09-01), None
patent: 09-321138 (1997-12-01), None
patent: 10-313052 (1998-11-01), None
patent: 11-121612 (1999-04-01), None

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