Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2007-05-22
2007-05-22
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S103000, C427S428010, C505S237000
Reexamination Certificate
active
10628459
ABSTRACT:
A production method for a polycrystalline thin film, depositing polycrystalline thin film on a polycrystalline substrate. The temperature of the polycrystalline substrate is set within a range from 150° C. to 250° C., the ion beam energy of the ion beam is adjusted within a range from 175 eV to 225 eV, and the ion beam is irradiated at an angle of incidence from 50° to 60° with respect to the normal for the film forming surface of the polycrystalline substrate. By this production method, the grain boundary inclination angle, formed by identical crystal axes of the crystal grains along a plane parallel to the film forming surface of the polycrystalline substrate, is limited to 20° or less, and a polycrystalline thin film having a strong crystal orientation can be stably produced.
REFERENCES:
patent: 6150034 (2000-11-01), Paranthaman et al.
patent: 6716796 (2004-04-01), Iijima et al.
patent: 6-145977 (1994-05-01), None
patent: 9-120719 (1997-05-01), None
patent: 10-121239 (1998-05-01), None
patent: 2001-114594 (2001-04-01), None
patent: WO 01/29293 (2001-04-01), None
patent: WO 02/47119 (2002-06-01), None
D F Lee et al. “Alternative Buffer Architectures for High Critical Current Density YBCO Superconducting Deposits on Rolling Assisted Biaxially-Textured Substrates”, Japanese Journal of Applied Physics, Japan Society of Application Physics, Tokyo, JP, vol. 38, No. 2B, 1999, pp. L178-L180, XP000910949.
Iijima et al., “Ion Beam Induced Growth Structure of Fluorite Type Oxide Films for Biaxally Textured HTSC Coated Conductors”, Materials Research Society Symposium Proceedings, Materials Research Society, Pittsburg, PA, co. 585, 2000, pp. 45-54, XP001119125.
Fujikura Ltd.
Hiteshew Felisa
LandOfFree
Method of producing polycrystalline thin film and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of producing polycrystalline thin film and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing polycrystalline thin film and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3735097