Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2007-05-01
2007-05-01
Harvey, Minsun Oh (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S044010, C372S045013, C372S046012, C372S049010, C372S049010, C372S049010, C372S050121
Reexamination Certificate
active
09504782
ABSTRACT:
A semiconductor laser device includes: a first cladding layer, which is made of a nitride semiconductor of a first conductivity type and is formed over a substrate; an active layer, which is made of another nitride semiconductor and is formed over the first cladding layer; and a second cladding layer, which is made of still another nitride semiconductor of a second conductivity type and is formed over the active layer. A spontaneous-emission-absorbing layer, which is made of yet another nitride semiconductor of the first conductivity type and has such an energy gap as absorbing spontaneous emission that has been radiated from the active layer, is formed between the substrate and the first cladding layer.
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Ban Yuzaburo
Kidoguchi Isao
Kume Masahiro
Miyanaga Ryoko
Suzuki Masakatsu
Flores-Ruiz Delma R.
Harvey Minsun Oh
Matsushita Electric - Industrial Co., Ltd.
Nixon & Peabody LLP
Studebaker Donald R.
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