Semiconductor memory device with hierarchical I/O line...

Static information storage and retrieval – Addressing – Plural blocks or banks

Reexamination Certificate

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Details

C365S063000

Reexamination Certificate

active

11299765

ABSTRACT:
A semiconductor memory device is composed of a plurality of banks each including a plurality of sub-arrays arranged in rows and columns; global I/O lines shared by the plurality of banks; local I/O lines disposed for every a number of sub-arrays within each of the plurality of banks; I/O switch control circuits responsive to respective I/O switch timing signals for establishing connections between the global I/O lines and the local I/O lines within each of the plurality of banks; and a timing control circuit. The timing control circuit controls the I/O switch timing signals that each I/O switch timing signal remains activated until associated one of the plurality of banks gets out of a row active state after once the each I/O switch timing signal is activated.

REFERENCES:
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patent: 6304509 (2001-10-01), Hirobe et al.
patent: 6597621 (2003-07-01), Tsuji et al.
patent: 9-73776 (1997-03-01), None
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patent: 2000-67577 (2000-03-01), None
patent: 2000-173269 (2000-06-01), None
patent: 3252895 (2001-11-01), None
patent: 2003-346497 (2003-12-01), None

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