Semiconductor laser element having InGaAs...

Details Semiconductor laser element having InGaAs... Semiconductor laser element having InGaAs...

2007-09-25

2007-09-25

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010

Reexamination Certificate

active

11077126

ABSTRACT:
In a semiconductor laser element, a lower cladding layer, a lower optical waveguide layer, an InGaAs compressive-strain quantum-well active layer, an upper optical waveguide layer, and an upper cladding layer are formed in this order in a stripe-shaped region on a substrate. A current-blocking layer is formed on both sides of the compressive-strain quantum-well active layer so that the compressive-strain quantum-well active layer is sandwiched between two portions of the current-blocking layer, and trenches extending along the direction of the laser resonator are formed through the current-blocking layer. Instead of providing the trenches, the widths of the layers formed above the substrate are reduced so as to form a ridge structure.

REFERENCES:
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patent: 5822349 (1998-10-01), Takaoka et al.
patent: 2002/0177250 (2002-11-01), Zhu et al.
“Low-Cost Opto-Electronic Packaging Technology for High-Speed IT Appliances”, Osamu Ibaragi, et al., Technical Research Report, vol. 102, No. 284, pp. 37-42, IEICE, 2002.

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