Low profile wire bond for an electron sensing device in an...

Details Low profile wire bond for an electron sensing device in an... Low profile wire bond for an electron sensing device in an...

Filed on

2007-04-03

Date issued

2007-04-03

Examiner

Allen, Stephone B. (Department: 2878)

Patent Class

Radiant energy

SubClass

Photocells; circuits and apparatus

SubSubClass

Photocell controlled circuit

Other Related Categories

C250S2140VT, C250S214100, C313S1030CM, C313S1050CM

Type

Reexamination Certificate

Status

active

Patent number

10811398

Description

ABSTRACT:
An electron sensing device for receiving electrons from an output surface of an electron gain device has a silicon die including an active surface area for positioning below the output surface of an electron gain device. The silicon die also includes a silicon step formed below and surrounding the active surface area, and a first array of bond pads formed on the silicon step for providing output signals from the silicon die. When the electron sensing device is positioned below the electron gain device, a tight vertical clearance is formed between the output surface of the electron gain device and the active surface area of the electron sensing device.

REFERENCES:
patent: 5506402 (1996-04-01), Estrera et al.
patent: 5633493 (1997-05-01), Suzuki et al.
patent: 6583558 (2003-06-01), Suyama et al.

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