Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-05-29
2007-05-29
Lam, David (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185170, C365S185120
Reexamination Certificate
active
10899160
ABSTRACT:
A nonvolatile semiconductor memory according to an example of the present invention comprises an internal circuit which writes, erases or reads in one of a high-speed operation mode in which a peak of current consumption takes a first value and a low current consumption mode having a second value lower than the first value, and a mode switch control circuit which controls a switchover between the high-speed operation mode and the low current consumption mode.
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Kabushiki Kaisha Toshiba
Lam David
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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