Deep photodiode isolation process

Details Deep photodiode isolation process Deep photodiode isolation process

2007-05-15

2007-05-15

Quach, T. N. (Department: 2826)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S073000, C438S423000, C438S479000

Reexamination Certificate

active

11009006

ABSTRACT:
A barrier implanted region of a first conductivity type located below an isolation region of a pixel sensor cell and spaced from a doped region of a second conductivity type of a photodiode of the pixel sensor cell is disclosed. The barrier implanted region is formed by conducting a plurality of deep implants at different energies and doping levels below the isolation region. The deep implants reduce surface leakage and dark current and increase the capacitance of the photodiode by acting as a reflective barrier to electrons generated by light in the doped region of the second conductivity type of the photodiode.

REFERENCES:
patent: 6310366 (2001-10-01), Rhodes et al.
patent: 6423993 (2002-07-01), Suzuki et al.
patent: 6569700 (2003-05-01), Yang
patent: 6590271 (2003-07-01), Liu et al.
patent: 2003/0038336 (2003-02-01), Mann

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