Patterned wafer inspection method and apparatus therefor

Details Patterned wafer inspection method and apparatus therefor Patterned wafer inspection method and apparatus therefor

2007-07-10

2007-07-10

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492100, C250S492200, C250S492300, C250S306000, C250S3960ML

Reexamination Certificate

active

11234197

ABSTRACT:
An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.

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