Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-01-02
2007-01-02
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S759000, C257S760000, C257S762000, C257S774000, C257S784000
Reexamination Certificate
active
11145227
ABSTRACT:
A semiconductor device having: a semiconductor substrate; a plurality of circuit regions formed on the semiconductor substrate, the circuit regions including circuits driven at multiple supply voltages; interlayer insulating film or films formed above the semiconductor substrate; copper wirings buried in the interlayer insulating film or films, a minimum wiring spacing between adjacent wirings in a same layer so that an electric field between adjacent wirings due to an applied voltage difference is set to 0.4 MV/cm or lower; and a copper diffusion preventive film formed on the interlayer insulating film, covering an upper surface of the copper wirings. A semiconductor device is provided which has copper wirings capable of realizing a high reliability in a long term, basing upon newly found knowledge of time dependent failure rate of wiring.
REFERENCES:
patent: 6228767 (2001-05-01), Yakura
patent: 6518167 (2003-02-01), You et al.
patent: 6713383 (2004-03-01), Shioya et al.
patent: 6774020 (2004-08-01), Fukada et al.
patent: 6818546 (2004-11-01), Saito et al.
patent: 6858936 (2005-02-01), Minamihaba et al.
patent: 2002/0141232 (2002-10-01), Saito et al.
patent: 2003/0087514 (2003-05-01), Tang et al.
patent: 2003/0227086 (2003-12-01), Otsuka et al.
patent: 2004/0009654 (2004-01-01), Abe
patent: 2005/0012129 (2005-01-01), Saito
patent: 2005/0048708 (2005-03-01), Yamada et al.
patent: 2005/0051870 (2005-03-01), Yamazaki et al.
patent: 2005/0161825 (2005-07-01), Watanabe
patent: 11-307639 (1999-11-01), None
patent: 2001-244267 (2001-09-01), None
patent: 2002-140042 (2002-05-01), None
patent: 2003-31664 (2003-01-01), None
patent: 2003-115540 (2003-04-01), None
Soward Ida M.
Westerman, Hattori, Daniels & Adrian , LLP.
LandOfFree
Semiconductor device with suppressed copper migration does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device with suppressed copper migration, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with suppressed copper migration will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3729029