Photosensor and solid state imaging device

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

Reexamination Certificate

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C250S208100

Reexamination Certificate

active

11104789

ABSTRACT:
The photosensor includes a semiconductor substrate provided with a light receiving portion for converting incident light and a signal readout portion; a light shielding layer formed above the light receiving portion and having an aperture; and a transparent insulating layer formed so as to fill the aperture. A relationship 2nW≧λmax is satisfied, where W represents a minimum width of the aperture, n represents an average refractive index of the insulating layer in a region between a position corresponding to the uppermost surface of the light shielding layer and the surface of the light receiving portion, and λmax represents a maximum wavelength of the sensitive wavelength range of the light receiving portion. The aperture rate of the light receiving portion can be reduced without causing a sensitivity decrease and a change in spectral characteristics on the long wavelength side of the effective wavelength range.

REFERENCES:
patent: 5306926 (1994-04-01), Yonemoto
patent: 6593591 (2003-07-01), Yudasaka et al.
patent: 6972219 (2005-12-01), Yukawa
patent: 2005/0224696 (2005-10-01), Tsukamoto
patent: 2005/0236553 (2005-10-01), Noto et al.
patent: 8-139300 (1995-05-01), None
patent: 2000-252451 (2000-09-01), None

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