Surface acoustic wave filter, surface acoustic wave device...

Details Surface acoustic wave filter, surface acoustic wave device... Surface acoustic wave filter, surface acoustic wave device...

2007-05-08

2007-05-08

Wells, Kenneth B. (Department: 2816)

Wave transmission lines and networks

Coupling networks

Wave filters including long line elements

C333S193000, C333S204000

Reexamination Certificate

active

10118621

ABSTRACT:
A longitudinally coupled resonator type surface acoustic filter includes a rotated Y-cut X-propagating LiTaO3substrate. The gap length G in the IDT electrode of the surface acoustic wave resonator is about 0.3 times the wavelength λ of the surface acoustic wave or less. The gap length G is the spacing between the bus bars tips of the electrode fingers extending from one bus bar (electrode terminal) toward the other opposing bus bar of the IDT electrode included in the surface acoustic wave filter.

REFERENCES:
patent: 5592040 (1997-01-01), Yamamoto
patent: 6172580 (2001-01-01), Taniguchi et al.
patent: 6265808 (2001-07-01), Taniguchi
patent: 05-267990 (1993-10-01), None
patent: 6-232682 (1994-08-01), None
patent: 11-191720 (1999-07-01), None
Official Communication issued in corresponding Japanese Patent Application No. 2001-110271, dated Jan. 24, 2006.

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