Light emitting element, method of manufacturing the same,...

Details Light emitting element, method of manufacturing the same,... Light emitting element, method of manufacturing the same,...

2007-05-22

2007-05-22

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

C257S099000

Reexamination Certificate

active

10958911

ABSTRACT:
An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle around (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle around (3)} an Al layer as a high-reflection electrode, {circle around (4)} a Ti layer having a barrier function, and {circle around (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.

REFERENCES:
patent: 4342944 (1982-08-01), SpringThorpe
patent: 5578162 (1996-11-01), D'Asaro et al.
patent: 5625202 (1997-04-01), Chai
patent: 5760422 (1998-06-01), Ishinaga
patent: 5917202 (1999-06-01), Haitz et al.
patent: 5977566 (1999-11-01), Okazaki et al.
patent: 5990500 (1999-11-01), Okazaki
patent: 6310364 (2001-10-01), Uemura
patent: 08-64872 (1996-03-01), None
patent: 08-288551 (1996-11-01), None
patent: 11-008410 (1999-01-01), None
patent: 11-191641 (1999-07-01), None
patent: 11-229168 (1999-08-01), None
patent: 11-298040 (1999-10-01), None
patent: 2000-164928 (2000-06-01), None

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