Semiconductor device and the method of producing the same

Details Semiconductor device and the method of producing the same Semiconductor device and the method of producing the same

2007-01-02

2007-01-02

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S730000, C257S678000, C257S781000, C257S620000, C257S618000, C257S790000, C257S787000, C257S788000, C257S789000

Reexamination Certificate

active

10989395

ABSTRACT:
A SiP type semiconductor device and a method of producing the same is provided wherein curvature of a wafer is suppressed in the production steps, workability does not decline, and high throughput can be attained. An insulation layer is formed by stacking a plurality of resin layers on a semiconductor substrate, wiring layers are formed by being buried in the insulation layer so as to be connected to an electronic circuit, an insulating buffer layer for buffering a stress generated at the time of being mounted on a board is formed on the insulation layer, a conductive post is formed through the buffer layer and connected to the wiring layer, and a projecting electrode is formed projecting from a surface of the buffer layer and connected to the conductive post.

REFERENCES:
patent: 5795815 (1998-08-01), Vokoun et al.
patent: 6600234 (2003-07-01), Kuwabara et al.
patent: 6633081 (2003-10-01), Sahara et al.

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