Semiconductor device

Details Semiconductor device Semiconductor device

1987-04-30

1989-09-19

Wojciechowicz, Edward J.

357 41, 357 43, 357 44, 357 45, 357 46, 357 50, 357 51, 357 55, 357 236, H01L 2702

Patent

active

048686263

ABSTRACT:
A semiconductor device facilitates keeping all parasitic resistance values between contact portion of a common source (V.sub.cc) line and intrinsic collector operation regions of respective transistors small enough so as not to exceed predetermined values and so as to be nearly identical. The parasitic resistance values are made small and nearly identical by disposing collector electrode connecting layers between base impurity introducing layers of respective transistors provided with predetermined intervals in a semiconductor substrate. Because of this arrangement to minimize and equalize resistances, the voltage drops generated by the parasitic resistances applied to respective transistors are suppressed so as to be lower than or not substantially exceed the operation threshold voltages of the parasitic transistors.

REFERENCES:
patent: 4564855 (1986-01-01), Van Zanten

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