Semiconductor device and manufacturing method of the same

Details Semiconductor device and manufacturing method of the same Semiconductor device and manufacturing method of the same

2007-03-20

2007-03-20

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257S303000, C257S528000, C257SE21011, C257SE21703, C438S309000, C438S311000

Reexamination Certificate

active

11007340

ABSTRACT:
The present invention intends to provide a technique that can improve the capacitance density while securing the withstand voltage of a capacitor element. In order to achieve the above object, the present inventive manufacturing method of a semiconductor device includes forming a metal film on a silicon oxide film, forming a SiN film on the metal film, forming a metal film on the SiN film, etching the upper most metal film with a photoresist film as a mask to form an upper electrode, thereafter forming a silicon oxide film that covers the upper electrode, patterning by etching the silicon oxide film and the SiN film with a photoresist film as a mask to form a capacitor insulating film and sputter-etching the lowermost metal film with the patterned silicon oxide film as a mask to form a lower electrode.

REFERENCES:
patent: 5736776 (1998-04-01), Yamamoto et al.
patent: 6777776 (2004-08-01), Hieda
patent: 6815222 (2004-11-01), Ejiri
patent: 6876056 (2005-04-01), Tilmans et al.
patent: 2001-077204 (2001-03-01), None
patent: 2001-156179 (2001-06-01), None
patent: 2001-326284 (2001-11-01), None
patent: 2002-252344 (2002-09-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and manufacturing method of the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing method of the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method of the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3725973