Method of cutting metal interconnections in a semiconductor devi

Details Method of cutting metal interconnections in a semiconductor devi Method of cutting metal interconnections in a semiconductor devi

1985-08-27

1988-01-19

Paschall, M. H.

Fishing, trapping, and vermin destroying

219121LG, 219121LJ, 219121FS, 219121LN, 29584, 437245, B23K 2600

Patent

active

047206209

ABSTRACT:
In a method of cutting metal interconnections in a semiconductor device according to the present invention, a semiconductor wafer (5) which has metal interconnections having a high melting point is placed in an oxygen atmosphere (9) within a chamber (6), and laser beams (4) are irradiated through an optical system (2) and an optical beam positioner (3) on the high melting point metal interconnections while maintaining the interior of the chamber (6) at a vacuum of 1 to 10 mTorr, and introducing oxygen from an oxygen inlet port (7) under a pressure of 1 to 1.5 Torr. to sublimate and cut the high melting point metal interconnections.

REFERENCES:
patent: 3750049 (1973-07-01), Dowley et al.
patent: 4162390 (1979-07-01), Kelly
patent: 4220842 (1980-09-01), Sturmer et al.
patent: 4504726 (1985-03-01), Hosaka et al.
"Laser Targeting Considerations in Redundunt Memory Repair", by D. Smart, R. Reilly, B. Wells et al., Proc. Spie Int. Soc. Opt. Eng. (U.S.A.) vol. 385, Jan. 1983, pp. 97-101.
"Oxygen Cutting", Welding Handbook, Third Edition, pp. 543, 544, 6-1971.

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