Semiconductor device having dummy wiring layers and a method...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

Reexamination Certificate

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Details

C257S776000

Reexamination Certificate

active

10999290

ABSTRACT:
A semiconductor device has first wiring layers30and a plurality of dummy wiring layers32that are provided on the same level as the first wiring layers30. The semiconductor device defines a row direction, and first virtual linear lines L1extending in a direction traversing the row direction. The row direction and the first virtual linear lines L1define an angle of 2-40 degrees, and the dummy wiring layers32are disposed in a manner to be located on the first virtual linear lines L1. The semiconductor device also defines a column direction perpendicular to the row direction, and second virtual linear lines L2extending in a direction traversing the column direction. The column direction and the second virtual linear lines L2define an angle of 2-40 degrees, and the dummy wiring layers32are disposed in a manner to be located on the second virtual linear lines L2.

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Japanese Examination Report (No English).

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