Trapped charge bidirectional power FET

Details Trapped charge bidirectional power FET Trapped charge bidirectional power FET

1982-09-23

1985-09-17

Larkins, William D.

357 235, 357 238, 357 39, H01L 2978, H01L 29747

Patent

active

045423962

ABSTRACT:
Lateral FET structure is disclosed for bidirectional power switching, including AC application. A plurality of integrated FETs each have left and right source regions and left and right channel regions with a common drift region therebetween, and conduct current in either direction according to the polarity of main terminals. Gating means includes gate electrode means disposed proximate and insulated from the channel regions and adapted for storing trapped charge tunneled through an insulated layer from a charging electrode.

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